肖特基二極管

Jingdao

晶導

N-channel enhancement mode vertical D-MOS transistor

DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use in telephone ringer circuits and for application in relay, high-speed and line transformer drivers. FEATURES ? Direct interface to C-MOS, TTL, etc. ? High-speed switching ? No

文件：75.69 Kbytes 頁數(shù)：12 Pages

PHI

PHI

N-Channel 100-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? TrenchFET? Power MOSFETs ? 175 °C Maximum Junction Temperature ? Compliant to RoHS Directive 2002/95/EC

文件：977.65 Kbytes 頁數(shù)：6 Pages

VBSEMI

微碧半導體

N-channel enhancement mode field-effect transistor

1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS?1 technology. Product availability: BSP110 in SOT223. 2. Features n TrenchMOS? technology n Very fast switching n Logic level compatible n Surface mount package. 3. Applications n Rela

文件：374.02 Kbytes 頁數(shù)：14 Pages

NEXPERIA

安世