| 型號 | 下載 訂購 | 功能描述 | 制造商 上傳企業(yè) | LOGO |
|---|---|---|---|---|
N-Channel 60-V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 25 ns ? Low Input and Output Leakage ? TrenchFET? Power MOSFET ? 1200V ESD Protection ? Compliant to RoHS Directive 2002/95/EC BENEFITS ? Low 文件：1.73234 Mbytes 頁數(shù)：8 Pages | VBSEMI 微碧半導(dǎo)體 | VBSEMI | ||
絲印：MV；Package：SOT-23；N-Channel 60 V (D-S) MOSFET FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 25 ns ? Low Input and Output Leakage ? TrenchFET? Power MOSFET ? 1200V ESD Protection ? Compliant to RoHS Directive 2002/95/EC BENEFITS ? L 文件：956.5 Kbytes 頁數(shù)：6 Pages | EVVOSEMI 翊歐 | EVVOSEMI | ||
Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The 文件：52.79 Kbytes 頁數(shù)：4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
Small Signal MOSFET 500 mA, 60 Volts Small Signal MOSFET 500 mA, 60 Volts N?Channel TO?92 (TO?226) Features ? Pb?Free Package is Available* 文件：98.34 Kbytes 頁數(shù)：4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI | ||
N-Channel 60-V (D-S) MOSFET FEATURES ? TrenchFET? Power MOSFET ? ESD Protected: 2000 V APPLICATIONS ? Direct Logic-Level Interface: TTL/CMOS ? Solid-State Relays ? Drivers: Relays, Solenoids, Lamps, Hammers, ?? Display, Memories, Transistors, etc. ? Battery Operated Systems 文件：73.25 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
N-Channel 60-V (D-S) MOSFET FEATURES ? TrenchFET? Power MOSFET ? ESD Protected: 2000 V APPLICATIONS ? Direct Logic-Level Interface: TTL/CMOS ? Solid-State Relays ? Drivers: Relays, Solenoids, Lamps, Hammers, ?? Display, Memories, Transistors, etc. ? Battery Operated Systems 文件：73.25 Kbytes 頁數(shù)：4 Pages | VISHAYVishay Siliconix 威世威世科技公司 | VISHAY | ||
N-Channel Enhancement-Mode MOS Transistor DESCRIPTION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package. 文件：25.36 Kbytes 頁數(shù)：2 Pages | CALOGIC | CALOGIC | ||
絲?。?a target="_blank" title="Marking" href="/bs170p/marking.html">BS170P；Package：E-Line；60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 文件：626.5 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
絲?。?a target="_blank" title="Marking" href="/bs170p/marking.html">BS170P；Package：E-Line；60V N-CHANNEL ENHANCEMENT MODE VERTICAL DMOSFET Features BVDSS > 60V RDS(ON) ≤ 5Ω @ VGS= 10V ID = 270mA Maximum Continuous Drain Current Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 文件：626.5 Kbytes 頁數(shù)：6 Pages | DIODES 美臺半導(dǎo)體 | DIODES | ||
Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductors proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The 文件：52.79 Kbytes 頁數(shù)：4 Pages | ONSEMI 安森美半導(dǎo)體 | ONSEMI |
晶體管資料
- 型號：
- 別名：
三極管、晶體管、晶體三極管
- 生產(chǎn)廠家：
- 制作材料：
Si-P+Darl+Di
- 性質(zhì)：
表面帖裝型 （SMD）
- 封裝形式：
貼片封裝
- 極限工作電壓：
60V
- 最大電流允許值：
1.5A
- 最大工作頻率：
350MHZ
- 引腳數(shù)：
3
- 可代換的型號：
2SB1048,2SD1470,2SD1472,2SD1511,
- 最大耗散功率：
- 放大倍數(shù)：
β>2000
- 圖片代號：
H-100
- vtest：
60
- htest：
350000000
- atest：
1.5
- wtest：
0
技術(shù)參數(shù)
- Package name：
SOT89
- Size (mm)：
4.5 x 2.5 x 1.5
- hFE [min]：
2000
- toff (ns)：
700
- fT [min] (MHz)：
200
- Polarity：
PNP
- IC [max] (mA)：
500
- VCES [max] (V)：
45
- Ptot [max] (mW)：
1300
- Complement：
BST50
- hFE [max]：
>2000
- Automotive qualified：
Y
| 供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
25+ |
SOT-89 |
20300 |
NEXPERIA/安世原裝特價BST60即刻詢購立享優(yōu)惠#長期有貨 |
詢價 | ||
25+ |
10 |
公司現(xiàn)貨庫存 |
詢價 | ||||
恩XP |
SOT89 |
30216 |
提供BOM表配單TEL:0755-83759919QQ:2355705587杜S |
詢價 | |||
NEXPERIA/安世 |
20+ |
SOT-89 |
120000 |
原裝正品 可含稅交易 |
詢價 | ||
ROHM/羅姆 |
2402+ |
DIP |
17110 |
優(yōu)勢代理渠道,原裝現(xiàn)貨,可全系列訂貨 |
詢價 | ||
恩XP |
2025+ |
SOT-89 |
5000 |
原裝進口價格優(yōu) 請找坤融電子! |
詢價 | ||
Nexperia |
25+ |
SOT-89 |
18798 |
正規(guī)渠道,免費送樣。支持賬期,BOM一站式配齊 |
詢價 | ||
ROHM |
13+ |
DIP |
18348 |
原裝分銷 |
詢價 | ||
PHI |
05+ |
原廠原裝 |
50051 |
只做全新原裝真實現(xiàn)貨供應(yīng) |
詢價 | ||
ROHM |
24+ |
DIP |
4500 |
詢價 |
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