絲?。?strong>BR4；Package：SOT-89-3L；SOT-89-3L Plastic-Encapsulate Transistors

FEATURES Low Voltage High Current Complement to BSR43 AAPLICATIONS Medium Power Transistor

文件：1.73804 Mbytes 頁數(shù)：4 Pages

DGNJDZ

南晶電子

絲?。?strong>BR4；Package：SOT89；80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43 2. Features and benefits ? High current ? High power dissipation capability ? Exposed heatsink for excellent thermal and electrical conductivity ? AEC-Q101 qua

文件：181.8 Kbytes 頁數(shù)：7 Pages

NEXPERIA

安世

絲?。?strong>BR4；Package：SOT89；80 V, 1 A PNP medium power transistor

1. General description PNP medium power transistor in a SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement: BSR43-Q 2. Features and benefits ? High current ? High power dissipation capability ? Exposed heatsink for excellent thermal and electrical conductivity ? Qualified

文件：181.31 Kbytes 頁數(shù)：7 Pages

NEXPERIA

安世

絲?。?strong>BR4；Package：SOT89；80V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features ? BVCEO > -80V ? IC = -1A High Continuous Current ? Low saturation voltage VCE(sat)

文件：293.75 Kbytes 頁數(shù)：7 Pages

DIODES

美臺(tái)半導(dǎo)體

絲?。?strong>BR4；Package：SOT89；80V PNP MEDIUM POWER TRANSISTOR IN SOT89

Features ? BVCEO > -80V ? IC = -1A High Continuous Current ? Low saturation voltage VCE(sat)

文件：293.75 Kbytes 頁數(shù)：7 Pages

DIODES

美臺(tái)半導(dǎo)體

絲印：BR4；Package：SMA；600 W Transient Voltage Suppressor

1. General description 600 W uni- and bi-directional Transient Voltage Suppressor (TVS) in a SMA Surface-Mounted Device (SMD) plastic package, designed for transient voltage protection. 2. Features and benefits ? Rated peak pulse power at 10/1000 μs waveform: PPPM = 600 W ? Reverse standoff

文件：210.65 Kbytes 頁數(shù)：12 Pages

NEXPERIA

安世

絲?。?strong>BR4；Package：SOT-89；GENERAL PURPOSE TRANSISTOR

文件：251.12 Kbytes 頁數(shù)：3 Pages

HOTTECH

合科泰

絲?。?a target="_blank" title="Marking" href="/br40ns40a/marking.html">BR40NS40A；Package：TO-263S；Schottky Barrier Diode

●Features High reliability Power mold type Cathode common dual type Low VF ●Application Switching power supply

文件：1.25424 Mbytes 頁數(shù)：9 Pages

ROHM

羅姆

絲?。?a target="_blank" title="Marking" href="/br4y/marking.html">BR4Y；Package：SMB；Automotive ultrafast recovery diode

文件：163.98 Kbytes 頁數(shù)：10 Pages

STMICROELECTRONICS

意法半導(dǎo)體

4.0kV 1.0A HIGH VOLTAGE DIODES

文件：68.92 Kbytes 頁數(shù)：1 Pages

GETEDZGETAI ELECTRONICS DEVICE CO., LTD

格特電子廣州市格特電子有限公司