DDR/DDR2 (For memory module) SPD Memory

●Description BR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect) ●Features ?256×8 bit architecture serial EEPROM ?Wide operating voltage range: 1.7V-3.6V ?Two-wire serial interface ?High reliability connection using Au pads and Au wires ?Se

文件：1.18422 Mbytes 頁(yè)數(shù)：20 Pages

ROHM

羅姆

Double-cell Memory for Plug & Play DDR/DDR2 (For memory module) SPD Memory

●Description\nBR34E02FVT-W is 256×8 bit Electrically Erasable PROM (Based on Serial Presence Detect)● ?256×8 bit architecture serial EEPROM\n?Wide operating voltage range: 1.7V-3.6V\n?Two-wire serial interface\n?High reliability connection using Au pads and Au wires\n?Self-Timed Erase and Write Cycle\n?Page Write Function (16byte)\n?Write Protect Mode\n? ?Settable Reversible Write Protect Function: ;

ROHM

羅姆

2 Kbit serial presence detect (SPD) EEPROM for double data rate (DDR1 and DDR2) DRAM modules

文件：411.26 Kbytes 頁(yè)數(shù)：34 Pages

STMICROELECTRONICS

意法半導(dǎo)體

2 Kbit Serial IC Bus EEPROM Serial Presence Detect for DDR2 DIMMs

文件：349.34 Kbytes 頁(yè)數(shù)：23 Pages

STMICROELECTRONICS

意法半導(dǎo)體

Backward compatible with the M34C02

文件：1.13409 Mbytes 頁(yè)數(shù)：36 Pages

STMICROELECTRONICS

意法半導(dǎo)體