絲印：500101；Package：VSON-CLIP；bq500101 NexFET? Power Stage

1 Features 1? 98% System Efficiency at 5 A ? Max Rated Continuous Current 10 A, Peak 15 A ? High-Frequency Operation (up to 600 kHz) ? High-Density SON 3.5 × 4.5 mm Footprint ? Ultra-Low Inductance Package ? System Optimized PCB Footprint ? 3.3-V and 5-V PWM Signal Compatible ? Input V

文件：431.83 Kbytes 頁數(shù)：19 Pages

TI

德州儀器

High Density EERAM Evaluation Kit

Product Features 1 Mbit SPI and 64 Kbit I2C serial EERAM devices Follows the published recommended capacitor selection for the EERAM device Test points with probe loops for I2C signals, SPI signals, VCC and GND On-board pull-ups for I2C bus operation Jumper options for 3.3V and 5V operation

文件：547.76 Kbytes 頁數(shù)：2 Pages

MICROCHIP

微芯科技

NexFET Power Stage

文件：376.22 Kbytes 頁數(shù)：20 Pages

TI

德州儀器

bq500101 NexFET? Power Stage

1 Features 1? 98% System Efficiency at 5 A ? Max Rated Continuous Current 10 A, Peak 15 A ? High-Frequency Operation (up to 600 kHz) ? High-Density SON 3.5 × 4.5 mm Footprint ? Ultra-Low Inductance Package ? System Optimized PCB Footprint ? 3.3-V and 5-V PWM Signal Compatible ? Input V

文件：431.83 Kbytes 頁數(shù)：19 Pages

TI

德州儀器