絲?。?strong>BLY；Package：QFN-12；6V, 3A, Synchronous, Step-Down Switcher with I2C Interface

文件：609.86 Kbytes 頁數(shù)：22 Pages

MPS

美國芯源

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply ov

文件：79.58 Kbytes 頁數(shù)：11 Pages

PHI

PHI

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply ov

文件：79.58 Kbytes 頁數(shù)：11 Pages

PHI

PHI

VHP power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply ov

文件：119.53 Kbytes 頁數(shù)：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLY88C is Designed for 12.5 V, High Band Application. FEATURES: ? Common Emitter ? PG = 10 dB at 10 W/175 MHz ? Omnigold? Metalization System

文件：50.04 Kbytes 頁數(shù)：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLY88C is Designed for 12.5 V, High Band Application. FEATURES: ? Common Emitter ? PG = 10 dB at 10 W/175 MHz ? Omnigold? Metalization System

文件：17.74 Kbytes 頁數(shù)：1 Pages

ASI

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply ov

文件：63.2 Kbytes 頁數(shù)：11 Pages

PHI

PHI

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a s

文件：68.97 Kbytes 頁數(shù)：11 Pages

PHI

PHI

VHF power transistor

DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial and military transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a s

文件：68.97 Kbytes 頁數(shù)：11 Pages

PHI

PHI

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI BLY89C is Designed primarily for VHF communications, up to 175 MHz. FEATURES: ? Common Emitter ? PG = 6.0 dB at 25 W/175 MHz ? Omnigold? Metalization System

文件：17.77 Kbytes 頁數(shù)：1 Pages

ASI