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          首頁(yè) >BLW90>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          BLW90

          UHF power transistor

          DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High rel

          文件:58.72 Kbytes 頁(yè)數(shù):11 Pages

          PHI

          PHI

          PHI

          BLW90

          UHF power transistor

          DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. High rel

          文件:111.67 Kbytes 頁(yè)數(shù):4 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          BLW90

          UHF power transistor

          Description: N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the UHF and VHF range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaranteed to withstand infinite VSWR at rated output power. Features:

          文件:45.33 Kbytes 頁(yè)數(shù):1 Pages

          ELEFLOW

          BLW90

          Trans GP BJT NPN 30V 0.62A 4-Pin CRPM

          NJS

          NJS

          晶體管資料

          • 型號(hào):

            BLW90

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            超高頻/特高頻 (UHF)_功率放大 (L)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

            60V

          • 最大電流允許值:

            0.62A

          • 最大工作頻率:

            470MHZ

          • 引腳數(shù):

            4

          • 可代換的型號(hào):

            BLW93,BLY37,

          • 最大耗散功率:

            4W

          • 放大倍數(shù):

          • 圖片代號(hào):

            G-56

          • vtest:

            60

          • htest:

            470000000000

          • atest:

            0.62

          • wtest:

            4

          技術(shù)參數(shù)

          • Output Power:

            4W

          • Number of Elements per Chip:

            1

          • Minimum DC Current Gain:

            [email protected]@5V

          • Maximum Transition Frequency:

            1200(Typ)MHz

          • Maximum Operating Temperature:

            200°C

          • Maximum Emitter Base Voltage:

            4V

          • Maximum DC Collector Current:

            0.62A

          • Maximum Collector Emitter Voltage:

            30V

          • Maximum Collector Emitter Saturation Voltage:

            0.9(Typ)@0.2A@1AV

          • Material:

            Si

          • Configuration:

            Single Dual Emitter

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          更多BLW90供應(yīng)商 更新時(shí)間2026-1-19 16:05:00
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