UHF power transistor

DESCRIPTION NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange. FEATURES ? Internal input matching to achieve high power gain

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PHI

PHI

UHF power transistor

DESCRIPTION\nNPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap. All leads are isolated from the flange.FEATURES\n? Internal input matching to achieve high power gain and easy de ? Internal input matching to achieve high power gain and easy design of wideband circuits\n? Emitter ballasting resistors for an optimum temperature profile\n? Gold metallization ensures excellent reliability.;

恩XP

isc Silicon NPN Darlington Power Transistor

文件：105.46 Kbytes 頁數(shù)：2 Pages

ISC

無錫固電

Desiccant sachets are used to absorb moisture from a given environment.

文件：263.55 Kbytes 頁數(shù)：1 Pages

ETCList of Unclassifed Manufacturers

未分類制造商

Desiccant sachets are used to absorb moisture from a given environment.

文件：263.55 Kbytes 頁數(shù)：1 Pages

ETCList of Unclassifed Manufacturers

未分類制造商