UHF linear push-pull power transistor

DESCRIPTION NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap. FEATURES ? Double stage internal input and output matching networks for an optimum wideband capabi

文件：129.19 Kbytes 頁數(shù)：12 Pages

PHI

PHI

UHF linear push-pull power transistor

DESCRIPTION NPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap. FEATURES ? Double stage internal input and output matching networks for an optimum wideband capabi

文件：124.35 Kbytes 頁數(shù)：4 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

UHF linear push-pull power transistor

DESCRIPTION\nNPN silicon planar epitaxial transistor with two sections in push-pull configuration. The device is encapsulated in a SOT289A 4-lead rectangular flange package, with a ceramic cap.FEATURES\n? Double stage internal input and output matching networks for an optimum wideband capability and ? Double stage internal input and output matching networks for an optimum wideband capability and high gain\n? Polysilicon emitter ballasting resistors for an optimum temperature profile\n? Gold metallization ensures excellent reliability.;

恩XP

UHF linear push-pull power transistor

NJS