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          首頁 >BLU99>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BLU99

          NPN SILICON RF POWER TRANSISTOR

          DESCRIPTION: The ASI BLU99 is Designed for use in UHF mobile radio transmitters aplications up to 470 MHZ FEATURES: ? PG = 10.5 dB Min. at 470 MHz ? Omnigold? Metallization System

          文件:17.83 Kbytes 頁數(shù):1 Pages

          ASI

          BLU99

          UHF power transistor

          DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES ? multi-base structure and diffused emitter-ballasting resistors for

          文件:104.1 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          BLU99

          UHF power transistor

          DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES ? multi-base structure and diffused emitter-ballasting resistors for

          文件:110.9 Kbytes 頁數(shù):17 Pages

          PHI

          PHI

          PHI

          BLU99/SL

          UHF power transistor

          DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES ? multi-base structure and diffused emitter-ballasting resistors for

          文件:110.9 Kbytes 頁數(shù):17 Pages

          PHI

          PHI

          PHI

          BLU99_SL

          UHF power transistor

          DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES ? multi-base structure and diffused emitter-ballasting resistors for

          文件:110.9 Kbytes 頁數(shù):17 Pages

          PHI

          PHI

          PHI

          BLU99SL

          UHF power transistor

          DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES ? multi-base structure and diffused emitter-ballasting resistors for

          文件:104.1 Kbytes 頁數(shù):3 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          BLU99SLASHSL

          UHF power transistor

          DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the u.h.f. band. The transistor is also very suitable for application in the 900 MHz mobile radio band. FEATURES ? multi-base structure and diffused emitter-ballasting resistors for

          文件:110.9 Kbytes 頁數(shù):17 Pages

          PHI

          PHI

          PHI

          BLU99

          Trans GP BJT NPN 16V 0.8A 4-Pin CRPM

          NJS

          NJS

          BLU99SL

          UHF power transistor

          NJS

          NJS

          晶體管資料

          • 型號:

            BLU99

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            超高頻/特高頻 (UHF)_TR_輸出極 (E)

          • 封裝形式:

            貼片封裝

          • 極限工作電壓:

            36V

          • 最大電流允許值:

            0.8A

          • 最大工作頻率:

            900MHZ

          • 引腳數(shù):

            4

          • 可代換的型號:

          • 最大耗散功率:

            4W

          • 放大倍數(shù):

          • 圖片代號:

            G-56

          • vtest:

            36

          • htest:

            900000000

          • atest:

            0.8

          • wtest:

            4

          技術(shù)參數(shù)

          • Output Power:

            5W

          • Number of Elements per Chip:

            1

          • Minimum DC Current Gain:

            [email protected]@10V

          • Maximum Transition Frequency:

            4000(Typ)MHz

          • Maximum Operating Temperature:

            200°C

          • Maximum Emitter Base Voltage:

            3V

          • Maximum DC Collector Current:

            0.8A

          • Maximum Collector Emitter Voltage:

            16V

          • Maximum Collector Base Voltage:

            36V

          • Material:

            Si

          • Configuration:

            Single Dual Emitter

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          更多BLU99供應(yīng)商 更新時(shí)間2026-1-18 16:04:00
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