金屬氧化物半導體場效應管：P-Channel,單通道,-30V（VDS Limit）

This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other battery powered circuits, and low in-line power loss ? High Power and current handing capability\n? ;

Belling

上海貝嶺

P-Channel Enhancement Mode Power MOSFET

文件：281.24 Kbytes 頁數(shù)：6 Pages

BELLING

上海貝嶺

P-Channel Enhancement Mode Power MOSFET

Belling

上海貝嶺

P-Channel Enhancement Mode MOSFET

文件：118.48 Kbytes 頁數(shù)：8 Pages

BOOKLY

百力微電子

Silicon Monolithic intregrated circuit

文件：173.29 Kbytes 頁數(shù)：4 Pages

ROHM

羅姆

P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -5.3A, RDS(ON) = 50m? @VGS = -10V. ??????? RDS(ON) = 90m? @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

文件：496.2 Kbytes 頁數(shù)：5 Pages

CET

華瑞