溝槽柵金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)管

\n The BLM8205BF uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. ? ● High density cell design for ultra low Rdson\n? ● Fully characterized Avalanche voltage and current\"\n? ;

Belling

上海貝嶺

N-channel Double MOSFET in a SOT23-6 Plastic Package

文件：1.41893 Mbytes 頁數(shù)：6 Pages

FOSHAN

藍(lán)箭電子

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 20V, 4.5A, RDS(ON) = 30m? @VGS = 4.5V. RDS(ON) = 40m? @VGS = 2.5V. ■ Super High dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TSSOP-8 for Surface Mount Package.

文件：123.43 Kbytes 頁數(shù)：4 Pages

CET

華瑞

Dual N-Channel 25-V (D-S) MOSFET

FEATURES ? Halogen-free Option Available ? TrenchFET? Power MOSFETs

文件：939.86 Kbytes 頁數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體