金屬氧化物半導(dǎo)體場(chǎng)效應(yīng)管

The BLM4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. ? High power and current handing capability\n? Lead free product is acquired\n? Surface mount package;

Belling

上海貝嶺

P-Channel Enhancement Mode Power MOSFET

文件：305.01 Kbytes 頁(yè)數(shù)：6 Pages

BELLING

上海貝嶺

Dual P Channel Enhancement Mode MOSFET

文件：356.77 Kbytes 頁(yè)數(shù)：7 Pages

BOOKLY

百力微電子

Dual P-Channel Enhancement Mode MOSFET

FEATURES ■ -30V, -4.9A, RDS(ON) = 53m? @VGS = -10V. -3.6A, RDS(ON) = 95m? @VGS = -4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package

文件：499.89 Kbytes 頁(yè)數(shù)：5 Pages

CET

華瑞

Dual P-Channel 30-V (D-S) MOSFET

FEATURES ? Halogen-free ? TrenchFET? Power MOSFET ? 100 UIS Tested APPLICATIONS ? Load Switches

文件：1.05753 Mbytes 頁(yè)數(shù)：9 Pages

VBSEMI

微碧半導(dǎo)體