溝槽柵金屬氧化物半導體場效應管

\n The BLM3407AY uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. ? ● High density cell design for ultra low Rdson\n? ● Fully characterized Avalanche voltage and current;

Belling

上海貝嶺

P-Channel 30V (D-S) 4A P-MOSFET

文件：106.33 Kbytes 頁數(shù)：5 Pages

BOOKLY

百力微電子

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ -30V, -5.1A, RDS(ON) = 48m? @VGS = -10V. RDS(ON) = 65m? @VGS = -4.5V. RDS(ON) = 115m? @VGS = -2.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired.

文件：232.11 Kbytes 頁數(shù)：4 Pages

CET

華瑞

Dual P-Channel Enhancement Mode Field Effect Transistor

FEATURES -30V, -5.1A, RDS(ON) = 48mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. Lead free product is acquired. RDS(ON) = 115mW @VGS = -2.5V.

文件：628.62 Kbytes 頁數(shù)：4 Pages

CET-MOS

華瑞