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首頁(yè) >BLL>規(guī)格書列表

型號(hào)	下載訂購(gòu)	功能描述	制造商上傳企業(yè)	LOGO
BLL6H1214-500	文件：201.56 Kbytes Page：20 Pages	LDMOS L-band radar power transistor General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Features and benefits ■ Easy power control ■ Integrated ESD protection ■ High flexibility with respect to pulse formats ■ Excellent ruggedness ■ High efficiency ■ Excell 文件：201.56 Kbytes 頁(yè)數(shù)：20 Pages	恩XP	恩XP
BLL6H1214-500	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BLL6H1214L(S)-250	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BLL6H1214L-250	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BLL6H1214LS-250	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BLL6H1214LS-500	文件：9.37507 Mbytes Page：130 Pages	RF Manual 16th edition General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p 文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages	恩XP	恩XP
BLL6H1214LS-500	文件：1.57938 Mbytes Page：21 Pages	LDMOS L-band radar power transistor General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Features and benefits ? Easy power control ? Integrated ESD protection ? High flexibility with respect to pulse formats ? Excellent ruggedness ? High efficiency ? Excel 文件：1.57938 Mbytes 頁(yè)數(shù)：21 Pages	AMPLEON 安譜隆	AMPLEON
BLL8H0514-25	文件：919.58 Kbytes Page：11 Pages	Power LDMOS transistor General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Features and benefits ? Easy power control ? Integrated dual side ESD protection ? High flexibility with respect to pulse formats ? Excellent ruggedness ? High efficiency ? Excellent 文件：919.58 Kbytes 頁(yè)數(shù)：11 Pages	AMPLEON 安譜隆	AMPLEON
BLL8H0514L-130	文件：942.69 Kbytes Page：13 Pages	LDMOS driver transistor General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Features and benefits ? Easy power control ? Integrated dual side ESD protection ? High flexibility with respect to pulse formats ? Excellent ruggedness ? High efficiency ? Excelle 文件：942.69 Kbytes 頁(yè)數(shù)：13 Pages	AMPLEON 安譜隆	AMPLEON
BLL8H0514LS-130	文件：942.69 Kbytes Page：13 Pages	LDMOS driver transistor General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Features and benefits ? Easy power control ? Integrated dual side ESD protection ? High flexibility with respect to pulse formats ? Excellent ruggedness ? High efficiency ? Excelle 文件：942.69 Kbytes 頁(yè)數(shù)：13 Pages	AMPLEON 安譜隆	AMPLEON

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詳細(xì)參數(shù)

型號(hào)：
BLL
功能描述：
射頻MOSFET電源晶體管 BULK TNS-MICP
RoHS：
否
制造商：
Freescale Semiconductor
配置：
Single
頻率：
1800 MHz to 2000 MHz
增益：
27 dB
輸出功率：
100 W
封裝/箱體：
NI-780-4
封裝：
Tray

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫(kù)存	備注	價(jià)格
深圳市旺財(cái)半導(dǎo)體有限公司	BLL1214-35	恩XP	23+		1688	房間現(xiàn)貨庫(kù)存:QQ:373621633	詢價(jià)
深圳市一線半導(dǎo)體有限公司	BLL1214-35	恩XP	24+	2-LDMOSTSOT467C	112		詢價(jià)
千層芯半導(dǎo)體(深圳)有限公司	BLL1214-35	恩XP	24+	SMD	5500	長(zhǎng)期供應(yīng)原裝現(xiàn)貨實(shí)單可談	詢價(jià)
深圳市寶芯創(chuàng)電子有限公司	BLL1214-35	恩XP	18+	SOT467C	12500	全新原裝正品,本司專業(yè)配單,大單小單都配	詢價(jià)
深圳市粵駿騰電子科技有限公司	BLL1214-35	恩XP	24+		355	現(xiàn)貨供應(yīng)	詢價(jià)
深圳市百諾芯科技有限公司	BLL1214-35	恩XP	23+	TO-59	8510	原裝正品代理渠道價(jià)格優(yōu)勢(shì)	詢價(jià)
深圳市萊克訊科技有限公司	BLL1214-35	原裝	1922+	TO-63	8600	萊克訊原廠貨源每一片都來(lái)自原廠原裝現(xiàn)貨薄利多	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	BLL1214-35	AMPLEON	23+	MOSFET	10000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市藍(lán)山航業(yè)科技有限公司	BLL1214-35	恩XP	25+	SOT	500000	行業(yè)低價(jià),代理渠道	詢價(jià)
深圳市賽美科科技有限公司	BLL1214-35	恩XP		NA	5500	一級(jí)代理原裝正品假一罰十價(jià)格優(yōu)勢(shì)長(zhǎng)期供貨	詢價(jià)

更多BLL供應(yīng)商更新時(shí)間2026-1-19 10:34:00

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