UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ■ Excellent ruggedness (VSWR ≥ 40 : 1 through a

文件：443.34 Kbytes 頁數(shù)：17 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ? Excellent ruggedness (VSWR ? 40 : 1 through

文件：1.53792 Mbytes 頁數(shù)：17 Pages

AMPLEON

安譜隆

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ? Excellent ruggedness (VSWR ? 40 : 1 through

文件：1.53792 Mbytes 頁數(shù)：17 Pages

AMPLEON

安譜隆

UHF power LDMOS transistor

General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications. Features and benefits ■ Excellent ruggedness (VSWR ≥ 40 : 1 through a

文件：443.34 Kbytes 頁數(shù)：17 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

UHF power LDMOS transistor

文件：525.22 Kbytes 頁數(shù)：17 Pages

PHI

PHI

UHF power LDMOS transistor

A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog transmitter applications.\n\n?\n\nWhitepaper Doherty Architectures in UHF\n\nThis White Paper explains different PA arch Excellent ruggedness (VSWR ≥ 40 : 1 through all phases)\nOptimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W\nSuitable for CW UHF and ISM applications\nHigh power gain\nHigh efficiency\nDesigned for broadband operation (470 MHz to 860 MHz)\nInternal input matching for high gain and optimum;

Ampleon

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UHF power LDMOS transistor

恩XP