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          首頁 >BLF6>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BLF6G10LS-200RN

          Power LDMOS transistor

          General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Features ■ Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a supply voltage of 28 V and an IDq of 1400 mA: ◆ Average output power = 40 W

          文件:169.73 Kbytes 頁數(shù):11 Pages

          恩XP

          恩XP

          BLF6G10LS-200RN

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G10LS-260PRN

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G10S-45

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G13L-250P

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G13L-250P

          Power LDMOS transistor

          General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Internally matched for ease of use ? Com

          文件:1.08692 Mbytes 頁數(shù):15 Pages

          AMPLEON

          安譜隆

          BLF6G13LS-250P

          Power LDMOS transistor

          General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Internally matched for ease of use ? Com

          文件:1.08692 Mbytes 頁數(shù):15 Pages

          AMPLEON

          安譜隆

          BLF6G13LS-250P

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G13LS-250PG

          Power LDMOS transistor

          General description 250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Features and benefits ? Easy power control ? Integrated ESD protection ? Excellent ruggedness ? High efficiency ? Excellent thermal stability ? Internally matched for ease of use ? Com

          文件:1.08692 Mbytes 頁數(shù):15 Pages

          AMPLEON

          安譜隆

          BLF6G15L(S)-40RN

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          技術(shù)參數(shù)

          • GP (dB):

            19.0

          • Die Technology:

            LDMOS

          • VDS (V):

            32.0

          • ηD (%):

            63.0

          • PL(1dB) (W):

            35.0

          • PL(1dB) (dBm):

            45.4

          • Test Signal:

            CW

          • Fmin (MHz):

            1

          • Fmax (MHz):

            1400

          • Status:

            Not for design in

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          HIGHEND
          1
          AP3
          48
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          恩XP
          2016+
          SOT502
          3900
          只做原裝,假一罰十,公司可開17%增值稅發(fā)票!
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          PHI
          23+
          高頻管
          1200
          專營高頻管模塊,全新原裝!
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          PH
          24+
          原廠封裝
          1500
          原裝現(xiàn)貨假一罰十
          詢價
          恩XP
          24+
          360
          詢價
          恩XP
          16+
          NA
          8800
          原裝現(xiàn)貨,貨真價優(yōu)
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          恩XP
          24+
          N/A
          21322
          公司原廠原裝現(xiàn)貨假一罰十!特價出售!強勢庫存!
          詢價
          原廠正品
          23+
          高頻管
          1000
          原裝正品,假一罰十
          詢價
          恩XP
          23+
          NA
          180
          專業(yè)電子元器件供應(yīng)鏈正邁科技特價代理特價,原裝元器件供應(yīng),支持開發(fā)樣品
          詢價
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          25+
          SMD
          2789
          全新原裝自家現(xiàn)貨!價格優(yōu)勢!
          詢價
          更多BLF6供應(yīng)商 更新時間2026-1-20 9:01:00
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