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          首頁 >BLF6>規(guī)格書列表

          型號下載 訂購功能描述制造商 上傳企業(yè)LOGO

          BLF6G22LS-130

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G22LS-180PN

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G22LS-180RN

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G22LS-40BN

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G22LS-40P

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G22LS-75

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G22S-45

          Power LDMOS transistor

          General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Features ■ Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 405 mA: ? Average output power = 2

          文件:75.73 Kbytes 頁數(shù):10 Pages

          恩XP

          恩XP

          BLF6G22S-45

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G27(LS)-100

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          BLF6G27(LS)-135

          RF Manual 16th edition

          General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

          文件:9.37507 Mbytes 頁數(shù):130 Pages

          恩XP

          恩XP

          技術(shù)參數(shù)

          • GP (dB):

            19.0

          • Die Technology:

            LDMOS

          • VDS (V):

            32.0

          • ηD (%):

            63.0

          • PL(1dB) (W):

            35.0

          • PL(1dB) (dBm):

            45.4

          • Test Signal:

            CW

          • Fmin (MHz):

            1

          • Fmax (MHz):

            1400

          • Status:

            Not for design in

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          更多BLF6供應(yīng)商 更新時(shí)間2026-1-20 9:01:00
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