Axial Lead and Cartridge Fuses - Midget

文件：78.82 Kbytes 頁數(shù)：1 Pages

LITTELFUSE

力特

UHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS power transistor in an 8-lead SOT409A SMD package with a ceramic cap. FEATURES ? High power gain ? Easy power control ? Gold metallization ? Good thermal stability ? Withstands full load mismatch ? Designed for broadband operati

文件：114.93 Kbytes 頁數(shù)：16 Pages

PHI

PHI

UHF power LDMOS transistor

General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Features ■ Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: ◆ Load power = 48 W (AV) ◆ Gain = 19 dB (typ) ◆

文件：115.83 Kbytes 頁數(shù)：14 Pages

PHI

PHI

UHF power LDMOS transistor

General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Features ■ Typical GSM EDGE performance at a frequency of 920 MHz and 960 MHz, a supply voltage of 28 V and an IDq of 650 mA ◆ Load power = 48 W (AV) ◆ Gain = 19 d

文件：101.63 Kbytes 頁數(shù)：13 Pages

PHI

PHI

UHF power LDMOS transistor

General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Features ■ Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: ◆ Load power = 48 W (AV) ◆ Gain = 19 dB (typ) ◆

文件：115.83 Kbytes 頁數(shù)：14 Pages

PHI

PHI

UHF power LDMOS transistor

General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Features ■ Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a supply voltage of 28 V and an IDq of 650 mA: ◆ Load power = 48 W (AV) ◆ Gain =

文件：109.84 Kbytes 頁數(shù)：12 Pages

PHI

PHI

UHF power MOS transistor

文件：101.05 Kbytes 頁數(shù)：16 Pages

JMNIC

錦美電子

UHF power MOS transistor

文件：101.05 Kbytes 頁數(shù)：16 Pages

JMNIC

錦美電子

UHF power LDMOS transistor

文件：130.6 Kbytes 頁數(shù)：14 Pages

恩XP

UHF power LDMOS transistor

文件：132.55 Kbytes 頁數(shù)：15 Pages

恩XP