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          首頁(yè) >BLF20>規(guī)格書(shū)列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          BLF2045

          UHF power LDMOS transistor

          DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange package (SOT467C) with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside el

          文件:133.78 Kbytes 頁(yè)數(shù):11 Pages

          PHI

          PHI

          PHI

          BLF2045

          UHF power LDMOS transistor

          DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 1800 to 2200 MHz. FEATURES ? Typical 2-tone performance at a supply voltage of 26V and IDQ of 500 mA - Output power =30W (PEP) - Gain = 12.5 dB - Efficiency = 32 - dlm = -26dBc ? Easy

          文件:130.16 Kbytes 頁(yè)數(shù):4 Pages

          NJSEMINew Jersey Semi-Conductor Products, Inc.

          新澤西半導(dǎo)體新澤西半導(dǎo)體公司

          BLF2047

          UHF power LDMOS transistor

          DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flange SOT502A package with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside elim

          文件:101.51 Kbytes 頁(yè)數(shù):12 Pages

          PHI

          PHI

          PHI

          BLF2047L

          UHF power LDMOS transistor

          DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on underside eli

          文件:93.63 Kbytes 頁(yè)數(shù):12 Pages

          PHI

          PHI

          PHI

          BLF2048

          UHF push-pull power LDMOS transistor

          DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. FEATURES ? High power gain ? Easy power control ? Excellent ruggedness ? Source on un

          文件:140.74 Kbytes 頁(yè)數(shù):12 Pages

          PHI

          PHI

          PHI

          BLF2012LL98R2400A

          2012 2.4-2.5GHz Combo

          文件:531.73 Kbytes 頁(yè)數(shù):5 Pages

          PULSE

          BLF2012LL98R2400A

          WIRELESS COMPONENTS

          文件:435.65 Kbytes 頁(yè)數(shù):5 Pages

          YAGEO

          國(guó)巨

          BLF2012LM31R2400A

          WIRELESS COMPONENTS

          文件:377.61 Kbytes 頁(yè)數(shù):5 Pages

          YAGEO

          國(guó)巨

          BLF2012LM37R2400A

          Combo

          文件:363.51 Kbytes 頁(yè)數(shù):5 Pages

          YAGEO

          國(guó)巨

          BLF202_15

          HF/VHF power MOS transistor

          文件:90.51 Kbytes 頁(yè)數(shù):16 Pages

          JMNIC

          錦美電子

          技術(shù)參數(shù)

          • 插入損耗(最大值):

            3.8dB

          • 相位差:

            180°@±10°

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          更多BLF20供應(yīng)商 更新時(shí)間2026-1-20 8:55:00
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