BUS INTERFACE MODUL

文件：195.11 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子

BUS INTERFACE MODUL

Infineon

英飛凌

N-channel enhancement mode field-effect transistor

Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS? technology. Product availability: BSH111 in SOT23. Features ■ TrenchMOS? technology ■ Very fast switching ■ Low threshold voltage ■ Subminiature surface mount package. Applications ■ Batte

文件：115.78 Kbytes 頁數(shù)：13 Pages

PHI

PHI

55 V, N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ? Low threshold voltage ? Very fast switching ? Trench MOSFET technology ? ElectroStatic

文件：742.71 Kbytes 頁數(shù)：16 Pages

NEXPERIA

安世

SIMOPAC Module (Power module Single switch N channel Enhancement mode)

SIMOPAC? Module VDS = 100 V ID = 200 A RDS(on) = 8.5 m? ●Power module ●Single switch ●N channel ●Enhancement mode ●Package with insulated metal base plate ●Package outline/Circuit diagram: 11)

文件：216.54 Kbytes 頁數(shù)：9 Pages

SIEMENS

西門子