RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

870 MHz optical receiver

Overview High dynamic range optical receiver amplifier module in a standard SOT115 package where the non-jacketed fiber has either no connector or has an FC/APC or SC/APC connector. The amplifier supply voltage pin and the photodiode bias voltage pin both connect to 24 V (DC). The modules have a mon Excellent linearity\nLow noise\nExcellent flatness\nStandard CATV outline\nRugged construction\nGold metallization ensures excellent reliability\nHigh optical input power range;

恩XP

N-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR

Features ? High Breakdown Voltage ? High Input Impedance ? Fast Switching Speed ? Specially Suited for Telephone Subsets ? Ideal for Automated Surface Mount Assembly

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DIODES

美臺半導體

POWER TRANSISTORS(8.0A,150-200V,60W)

文件：110.55 Kbytes 頁數(shù)：3 Pages

MOSPEC

統(tǒng)懋

MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS

DESCRIPTION The devices are silicon Epitaxial Planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 oCRT video displays. ■ STMicroelectronics PREFERRED SALESTYP

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STMICROELECTRONICS

意法半導體