10-4200 MHz BROADBAND AMPLIFIER

Product Description The BGH7 is a BroadBand, HBT Amplifier that is ideal for applications demanding high linearity in a wideband of 10-4200 MHz. The BGH7 is internally matched to 50 Ohms and requires no external matching components. It is available in RoHS2-compliant SOT363 SMT package. These dev

文件：3.18652 Mbytes 頁(yè)數(shù)：16 Pages

BEREX

絲印：BGH75N120HF1；Package：TO-247-3；Hybrid SiC Discrete Devices

Features Low VCE(sat) Trench FS Technology High Speed Switching Hybrid SiC Discrete Devices Halogen Free, RoHS Complian Applications UPS PV Inverter Welding Machine DC/DC Converters with high Switching frequency

文件：1.35878 Mbytes 頁(yè)數(shù)：12 Pages

BASICSEMI

基本半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/bgh75n65hf1/marking.html">BGH75N65HF1；Package：TO-247-3；Hybrid SiC Discrete Devices

Features Low VCE(sat) Trench FS Technology High Speed Switching Hybrid SiC Discrete Devices Halogen Free, RoHS Complian Applications UPS PV Inverter Welding Machine On-board Charger Totem Pole Bridgeless PFC High Frequency Motor Drive

文件：2.82681 Mbytes 頁(yè)數(shù)：12 Pages

BASICSEMI

基本半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/bgh75n65hs1/marking.html">BGH75N65HS1；Package：TO-247-3；Hybrid SiC Discrete Devices

Features Low VCE(sat) Trench FS Technology High Speed Switching Hybrid SiC Discrete Device Halogen Free, RoHS Complian Applications UPS PV Inverter Welding Machine On-board Charger Totem Pole Bridgeless PFC

文件：2.00217 Mbytes 頁(yè)數(shù)：12 Pages

BASICSEMI

基本半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/bgh75n65zf1/marking.html">BGH75N65ZF1；Package：TO-247-4；Hybrid SiC Discrete Devices

Features Low VCE(sat) Trench FS Technology High Speed Switching Hybrid SiC Discrete Device Halogen Free, RoHS Complian Applications UPS PV Inverter Welding Machine On-board Charger Totem Pole Bridgeless PFC

文件：2.07557 Mbytes 頁(yè)數(shù)：13 Pages

BASICSEMI

基本半導(dǎo)體

混合碳化硅分立器件

基本半導(dǎo)體混合碳化硅分立器件將新型場(chǎng)截止IGBT技術(shù)和碳化硅肖特基二極管技術(shù)相結(jié)合，為硬開關(guān)拓?fù)浯蛟炝艘粋€(gè)兼顧品質(zhì)和性價(jià)比的方案。該器件將傳統(tǒng)的硅基IGBT和碳化硅肖特基二極管合封，在部分應(yīng)用中可以替代傳統(tǒng)的IGBT（硅基IGBT與硅基快恢復(fù)二極管合封），使IGBT的開關(guān)損耗大幅降低，適用于儲(chǔ)能（ESS）、車載充電器（OBC）、不間斷電源（UPS）、光伏組串逆變器等領(lǐng)域。

BASiC

基本半導(dǎo)體

混合碳化硅分立器件

基本半導(dǎo)體混合碳化硅分立器件將新型場(chǎng)截止IGBT技術(shù)和碳化硅肖特基二極管技術(shù)相結(jié)合，為硬開關(guān)拓?fù)浯蛟炝艘粋€(gè)兼顧品質(zhì)和性價(jià)比的方案。該器件將傳統(tǒng)的硅基IGBT和碳化硅肖特基二極管合封，在部分應(yīng)用中可以替代傳統(tǒng)的IGBT（硅基IGBT與硅基快恢復(fù)二極管合封），使IGBT的開關(guān)損耗大幅降低，適用于儲(chǔ)能（ESS）、車載充電器（OBC）、不間斷電源（UPS）、光伏組串逆變器等領(lǐng)域。

BASiC

基本半導(dǎo)體

Trench Field Stop IGBT Co-packed with SiC Schottky Barrier Diode

BASiC

基本半導(dǎo)體