750 MHz, 18.5 dB gain power doubler amplifier

DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). FEATURES ? Excellent linearity ? Extremely low noise ? Silicon nitride passivation ? Rugged construction ? Gold metallization ensures excellent reliability. APPLICATIONS ? CATV s

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PHI

PHI

750 MHz, 18.5 dB gain power doubler amplifier

Overview Hybrid amplifier module operating at a voltage supply of 24 V (DC). Excellent linearity\nExtremely low noise\nGold metallization ensures excellent reliability\nRugged construction;

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Bias Controlled Monolithic IC VHF/UHF RF Amplifier

Features ? Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. ? High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz) ? Low noise; NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz)

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HITACHIHitachi Semiconductor

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Bias Controlled Monolithic IC VHF/UHF RF Amplifier

Features ? Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. ? High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz) ? Low noise; NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz)

文件：174.29 Kbytes 頁數(shù)：13 Pages

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Bias Controlled Monolithic IC VHF/UHF RF Amplifier

Features ? Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. ? High |yfs| ; |yfs| = 29 mS typ. ( f = 1kHz) ? Low noise; NF = 1.0 dB typ. (at f = 200 MHz), NF = 1.6 dB typ. (at f = 900 MHz) ? Withstanding to ESD; Build in

文件：174.29 Kbytes 頁數(shù)：13 Pages

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