RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

MMIC寬帶放大器

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. Internally matched to 50 Ω\nA gain of 31 dB at 750 MHz\nOutput power at 1 dB gain compression = 5 dBm\nSupply current = 16.5 mA at a supply voltage of 2.5 V\nReverse isolation > 52 dB up to 750 MHz\nGood linearity with low second order and third order products\nNoise figure = 3.1 dB at 500 MHz\nUnco;

恩XP

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE

文件：405.43 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE(FOR MUTING AND SWITCHING)

FOR MUTING AND SWITCHING APPLICATION. FEATURES ? High Emitter-Base Voltage : VEBO=25V(Min.) ? High Reverse hFE : Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ? Low on Resistance : RON=1Ω (Typ.), (IB=5mA)

文件：319.13 Kbytes 頁數(shù)：3 Pages

KEC

KEC(Korea Electronics)

Quad IO-Link Master Hot Swap Controller and PHY

文件：716.05 Kbytes 頁數(shù)：44 Pages

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