RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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MMIC wideband amplifier

1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits ? Internally matched to 50 ? ? A gain of 23.6 dB at 950 MHz ? Output power at 1 dB gain compressi

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MMIC寬帶放大器

Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internalmatching circuit in a 6-pin SOT363 plastic SMD package. Internally matched to 50 Ω\nA gain of 23.6 dB at 950 MHz\nOutput power at 1 dB gain compression = -6 dBm\nSupply current = 5.8 mA at a supply voltage of 3.0 V\nReverse isolation > 40 dB up to 2 GHz\nGood linearity with low second order and third order products\nNoise figure = 3.6 dB at 950 MHz\nUnco;

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MMIC wideband amplifier

1.1 General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. 1.2 Features and benefits ? Internally matched to 50 ? ? A gain of 23.6 dB at 950 MHz ? Output power at 1 dB gain compressi

文件：259.98 Kbytes 頁(yè)數(shù)：18 Pages

恩XP