MMIC wideband amplifier

General description Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 plastic SMD package. Features and benefits ■ Internally matched to 50 Ω ■ A gain of 26 dB at 950 MHz ■ Output power at 1 dB gain compression = 1 dBm

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

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MMIC寬帶放大器

Silicon Monolitic Microwave Integrated Circuit (MMIC) wideband amplifier with internalmatching circuit in a 6-pin SOT363 plastic SMD package. Internally matched to 50 Ω\nA gain of 26 dB at 950 MHz\nOutput power at 1 dB gain compression = 1 dBm\nSupply current = 12.5 mA at a supply voltage of 3.3 V\nReverse isolation > 36 dB up to 2 GHz\nGood linearity with low second order and third order products\nNoise figure = 4.1 dB at 950 MHz\nUncond;

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