絲?。?strong>BG02；Package：DFN3x3-12L；ECPower? 20V 18mΩ Protection Switch with True Reverse Current Blocking

General Description The AOZ1328DI power switch is intended for applications that require circuit protections. The input operating voltage ranges between 3.4V and 22V, making it ideal for USB Type-C power delivery applications. The VIN terminal is rated as 28V Absolute Maximum. The AOZ1328DI

文件：1.58746 Mbytes 頁數(shù)：16 Pages

AOSMD

萬國半導體

絲?。?a target="_blank" title="Marking" href="/bg022n120m3s/marking.html">BG022N120M3S；Package：D2PAK-7L；MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A

Features ? Typ. RDS(on) = 22 m ? Low switching losses (Typ. EON 485 J at 40 A, 800 V) ? 100 Avalanche Tested ? These Devices are RoHS Compliant Typical Applications ? Solar Inverters ? Electric Vehicle Charging Stations ? Uninterruptible Power Supplies (UPS) ? Energy Storage Systems

文件：227.68 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導體

絲印：BG025N065SC1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET - 19 mohm, 650V, M2, D2PAK-7L

Features ? Typ. RDS(on) = 19 m @ VGS = 18 V Typ. RDS(on) = 25 m @ VGS = 15 V ? Ultra Low Gate Charge (QG(tot) = 164 nC) ? Low Output Capacitance (Coss = 278 pF) ? 100 Avalanche Tested ? TJ = 175°C ? RoHS Compliant Typical Applications ? SMPS (Switching Mode Power Supplies) ? Solar Inv

文件：218.62 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/bg028n170m1/marking.html">BG028N170M1；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET 28 m, 1700 V, M1, D2PAK-7L

Features ? Typ. RDS(on) = 28 m ? Ultra Low Gate Charge (typ. QG(tot) = 222 nC) ? Low Effective Output Capacitance (typ. Coss = 200 pF) ? 100 Avalanche Tested ? RoHS Compliant Typical Applications ? UPS ? DC/DC Converter ? Boost Converter

文件：240.67 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導體

絲印：BG022N120M3S；Package：D2PAK-7L；MOSFET - Silicon Carbide (SiC), Single N-Channel, M3, D2PAK-7L 1200 V, 22 m, 58 A

Features ? Typ. RDS(on) = 22 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 148 nC) ? High Speed Switching with Low Capacitance (Coss = 148 pF) ? 100 Avalanche Tested ? AEC?Q101 Qualified and PPAP Capable ? These Devices are RoHS Compliant Typical Applications ? Automotive On Board C

文件：232.19 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導體

絲?。?a target="_blank" title="Marking" href="/bg022n120m3s/marking.html">BG022N120M3S；Package：D2PAK-7L；Silicon Carbide (SiC) MOSFET – 22mohm, 1200V, M3, D2PAK-7L

Features ? Typ. RDS(on) = 22 m @ VGS = 18 V ? Ultra Low Gate Charge (QG(tot) = 148 nC) ? High Speed Switching with Low Capacitance (Coss = 148 pF) ? 100 Avalanche Tested ? AEC?Q101 Qualified and PPAP Capable ? These Devices are RoHS Compliant Typical Applications ? Automotive On Board C

文件：305.09 Kbytes 頁數(shù)：9 Pages

ONSEMI

安森美半導體