PNP 4 GHz wideband transistor

DESCRIPTION Silicon PNP transistor in a plastic, SOT323 (S-mini) package. The BFT92W uses the same crystal as the SOT23 version, BFT92. FEATURES ? High power gain ? Gold metallization ensures excellent reliability ? SOT323 (S-mini) package. APPLICATION It is intended as a

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

PNP Silicon RF Transistor (For broadband amplifiers up to 2GHz at collector currents up to 20mA)

PNP Silicon RF Transistor ? For broadband amplifiers up to 2GHz at collector currents up to 20mA ? Complementary type: BFR 92W (NPN)

文件：56.71 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子

PNP 4 GHz wideband transistor

文件：371.97 Kbytes 頁數(shù)：14 Pages

PHI

PHI

PNP 4 GHz寬頻帶晶體管

硅PNP晶體管，采用SOT323 (S-mini)塑料封裝。BFT92W使用的晶體與采用SOT23封裝的BFT92相同。 金屬化鍍金確保極佳的可靠性\n高功率增益\n小型封裝;

恩XP

PNP Silicon RF Transistor for broadba...

Infineon

英飛凌

三極管

Nexperia

安世