N-channel silicon FET

DESCRIPTION Symmetrical n-channel silicon epitaxial planar junction field-effect transistor in a microminiature plastic envelope. The transistor is intended for low level general purpose amplifiers in thick and thin-film circuits.

文件：56.68 Kbytes 頁數(shù)：9 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

N溝道FET

SOT23封裝N溝道對稱平面外延結型場效應晶體管。 可互換的漏極和源極連接\n小型封裝;

恩XP

SMD

MINI

上傳：深圳市鼎欣微電子有限公司

SOT-323-3

恩XP

上傳：深圳市粵駿騰電子科技有限公司