RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

isc Silicon NPN RF Transistor

DESCRIPTION ? High Power Gain ? High Current Gain Bandwidth Product ? Low Noise Figure APPLICATIONS ? Designed for use in RF amplifiers ,mixers and oscillators with signal frequencies up to 1 GHz.

文件：211.83 Kbytes 頁數(shù)：7 Pages

ISC

無錫固電

NPN 5 GHz wideband transistor

DESCRIPTION Silicon NPN transistor encapsulated in a plastic SOT323 (S-mini) package. The BFR93AW uses the same crystal as the SOT23 version, BFR93A. FEATURES ? High power gain ? Gold metallization ensures excellent reliability ? SOT323 (S-mini) package. APPLICATIONS It is

文件：87.53 Kbytes 頁數(shù)：12 Pages

PHI

PHI

Silicon NPN RF Transistor

DESCRIPTION ? High Power Gain ? High Current Gain Bandwidth Product ? Low Noise Figure APPLICATIONS ? Designed for use in RF amplifiers .mixers and oscillators with signal frequencies up to 1 GH

文件：70.66 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體公司

NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA)

NPN Silicon RF Transistor ? For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA

文件：57.9 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子

NPN Silicon RF Transistor

文件：142.49 Kbytes 頁數(shù)：7 Pages

INFINEON

英飛凌

Low Noise Silicon Bipolar RF Transistor

文件：614.9 Kbytes 頁數(shù)：6 Pages

INFINEON

英飛凌

NPN 6 GHz wideband transistor

文件：101.98 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

NPN 6 GHz wideband transistor

文件：101.98 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

NPN 6 GHz wideband transistor

文件：95.72 Kbytes 頁數(shù)：13 Pages

JMNIC

錦美電子