NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor ? High gain ultra low noise RF transistor ? Provides outstanding performance for a wide range of wireless applications up to 10 GHz and more ? Ideal for CDMA and WLAN applications ? Outstanding noise figure F = 0.5 dB at 1.8 GHz Outstanding noise

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NPN Silicon Germanium RF Transistor

Product Brief The BFR740L3RH is a very low noise wideband NPN RF transistor. The device is based on Infineon’s reliable high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The BFR740L3RH provides a transition frequency fT of approximately 40 GHz and is suited for low

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絲?。?a target="_blank" title="Marking" href="/r2/marking.html">R2；Package：TSLP-3-10；C NPN RF bipolar transistor

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絲?。?a target="_blank" title="Marking" href="/r2/marking.html">R2；Package：TSLP-3-10；C NPN RF bipolar transistor

文件：553.86 Kbytes 頁數(shù)：22 Pages

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Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.16359 Mbytes 頁數(shù)：29 Pages

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Low Noise Silicon Germanium Bipolar RF Transistor

文件：1.16359 Mbytes 頁數(shù)：29 Pages

INFINEON

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低噪聲RF 管基

? Very low noise figure NFmin = 0.5 dB at 1.9 GHz, 0.8 dB at 5.5 GHz, 3 V, 6 mA\n ? High power gain Gms = 20 dB at 5.5 GHz, 15 mA, 3 V\n ? Ease of use due to the gain-bandwidth capabilities\n ? High sensitivity low noise laser receiver matrix\n ? High RF Transistor Hfe controllability\n ? Very thin ;

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NPN Silicon Germanium RF Transistor

Infineon

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包裝：散裝 描述：RF BIP TRANSISTORS

INFINEON

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包裝：散裝 描述：RF BIP TRANSISTORS

INFINEON

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