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          首頁(yè) >BFR18>規(guī)格書列表

          型號(hào)下載 訂購(gòu)功能描述制造商 上傳企業(yè)LOGO

          BFR181TW

          Silicon NPN Planar RF Transistor

          Features ? Low noise figure ? High power gain Applications ?? For low noise and high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA.

          文件:68.3 Kbytes 頁(yè)數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          BFR181W

          絲印:RFs;Package:SOT-323;NPN Silicon RF Transistor

          Low Noise Silicon Bipolar RF Transistor ? For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ? fT = 8 GHz, NFmin = 0.9 dB at 900 MHz ? Easy to use Pb-free (RoHS compliant) and halogen free industry standard package with visible leads ? Qualification report

          文件:79.53 Kbytes 頁(yè)數(shù):7 Pages

          INFINEON

          英飛凌

          BFR181W

          NPN Silicon RF Transistor )For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12mA)

          NPN Silicon RF Transistor ? For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA ? fT = 8 GHz F = 1.45 dB at 900 MHz

          文件:56.04 Kbytes 頁(yè)數(shù):7 Pages

          SIEMENS

          西門子

          BFR182

          NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA)

          NPN Silicon RF Transistor ? For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA ? fT = 8GHz F = 1.2dB at 900MHz

          文件:71.53 Kbytes 頁(yè)數(shù):8 Pages

          SIEMENS

          西門子

          BFR182

          絲印:RGs;Package:SOT-23;NPN Silicon RF Transistor

          Low Noise Silicon Bipolar RF Transistor ? For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA ? fT = 8 GHz, NFmin = 0.9 dB at 900 MHz ? Pb-free (RoHS compliant) package ? Qualification report according to AEC-Q101 available

          文件:79.13 Kbytes 頁(yè)數(shù):7 Pages

          INFINEON

          英飛凌

          BFR182

          Low Noise Silicon Bipolar RF Transistor

          DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 12V(Min) ·DC Current Gain- : hFE= 70(Min)@ IC= 10mA

          文件:236.8 Kbytes 頁(yè)數(shù):3 Pages

          ISC

          無(wú)錫固電

          BFR182T

          Silicon NPN Planar RF Transistor

          Features ? Low noise figure ? High power gain ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications ??? For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.

          文件:68.31 Kbytes 頁(yè)數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          BFR182TF

          Silicon NPN Planar RF Transistor

          Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to s

          文件:82.5 Kbytes 頁(yè)數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          BFR182TW

          isc Silicon NPN RF Transistor

          DESCRIPTION ·For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Low noise figure ·High power gain

          文件:564.27 Kbytes 頁(yè)數(shù):3 Pages

          ISC

          無(wú)錫固電

          BFR182TW

          Silicon NPN Planar RF Transistor

          Features ? Low noise figure ? High power gain ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications ??? For low noise and high gain broadband amplifiers at collector currents from 1 mA to 20 mA.

          文件:68.31 Kbytes 頁(yè)數(shù):4 Pages

          VISHAYVishay Siliconix

          威世威世科技公司

          晶體管資料

          • 型號(hào):

            BFR18

          • 別名:

            三極管、晶體管、晶體三極管

          • 生產(chǎn)廠家:

          • 制作材料:

            Si-NPN

          • 性質(zhì):

            低頻或音頻放大 (LF)_TR

          • 封裝形式:

            直插封裝

          • 極限工作電壓:

            85V

          • 最大電流允許值:

            0.5A

          • 最大工作頻率:

            90MHZ

          • 引腳數(shù):

            3

          • 可代換的型號(hào):

            BC141,BC489,BC538,BC639,BCX24,BSW63,BSW64,2N3700,2N3701,2SD667,3DG170G,

          • 最大耗散功率:

            0.5W

          • 放大倍數(shù):

          • 圖片代號(hào):

            D-8

          • vtest:

            85

          • htest:

            90000000

          • atest:

            0.5

          • wtest:

            0.5

          技術(shù)參數(shù)

          • Maximum Emitter Base Voltage:

            2V

          • Maximum DC Collector Current Range:

            0.001 to 0.06A

          • Maximum DC Collector Current:

            0.004A

          • Maximum Collector Emitter Voltage Range:

            <20V

          • Maximum Collector Emitter Voltage:

            8V

          • Maximum Collector Cut-Off Current:

            100nA

          • Maximum Collector Base Voltage:

            10V

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          更多BFR18供應(yīng)商 更新時(shí)間2026-1-19 10:50:00
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