NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope. It is primarily intended for low noise, general RF applications.

文件：63.23 Kbytes 頁數(shù)：8 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/r7s/marking.html">R7s；Package：SOT-23；NPN Silicon RF Transistor

Low Noise Silicon Bipolar RF Transistor ? High linearity low noise RF transistor ? 22 dBm OP1dB and 31 dBm OIP3 @ 900 MHz, 8 V, 70 mA ? For UHF / VHF applications ? Driver for multistage amplifiers ? For linear broadband and antenna amplifiers ? Collector design supports 5 V supply voltage

文件：80.64 Kbytes 頁數(shù)：7 Pages

INFINEON

英飛凌

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

Low Noise Figure

DESCRIPTION ? Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ? High Gain ︱ S21e︱ 2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz APPLICATIONS ? Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

文件：189.42 Kbytes 頁數(shù)：5 Pages

ISC

無錫固電

Silicon NPN RF Transistor

DESCRIPTION ? Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, IC = 20 mA, f = 900 MHz ? High Gain ︱ S21e︱ 2 = 10.5 dB TYP. @VCE= 8 V,IC = 70 mA,f = 900 MHz APPLICATIONS ? Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers.

文件：73.76 Kbytes 頁數(shù)：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導體新澤西半導體公司

NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers)

NPN Silicon RF Transistor ? For low noise, high-gain amplifiers ? For linear broadband amplifiers ? Special application: antenna amplifiers ? Complementary type: BFR 194 (PNP)

文件：57.83 Kbytes 頁數(shù)：7 Pages

SIEMENS

西門子

絲?。?a target="_blank" title="Marking" href="/r7s/marking.html">R7s；Package：SOT-23；NPN Silicon RF Transistor

文件：523.74 Kbytes 頁數(shù)：9 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/r7s/marking.html">R7s；Package：SOT-23；Low Noise Silicon Bipolar RF Transistor

文件：622.35 Kbytes 頁數(shù)：8 Pages

INFINEON

英飛凌

NPN 5 GHz wideband transistor

文件：229.01 Kbytes 頁數(shù)：10 Pages

PHI

PHI

高線性度RF 管基

NPN硅射頻晶體管 ? 高線性低噪聲射頻晶體管\n? 適用于 UHF / VHF 應(yīng)用\n? 適用于線性寬帶和天線放大器\n? 無鉛（符合 RoHS 標準）封裝;

Infineon

英飛凌