NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes.

文件：227.38 Kbytes 頁數(shù)：7 Pages

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

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NPN 4 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT89 envelope intended for application in thick and thin-film circuits. It is primarily intended for MATV purposes.

文件：37.77 Kbytes 頁數(shù)：6 Pages

PHI

PHI

NPN 4 GHz wideband transistor

文件：42.61 Kbytes 頁數(shù)：6 Pages

JMNIC

錦美電子

NPN 4 GHz wideband transistor

文件：42.61 Kbytes 頁數(shù)：6 Pages

JMNIC

錦美電子

NPN 4 GHz wideband transistor

文件：233.52 Kbytes 頁數(shù)：7 Pages

PHI

PHI

NPN 4 GHz寬頻帶晶體管

NPN晶體管，采用SOT89塑料封裝，設計用于厚膜和薄膜電路中的應用。該晶體管主要設計用于MATV。 小型封裝;

恩XP

Trans RF BJT NPN 18V 0.15A 4-Pin(3+Tab) SOT-89

NJS