200 mW High Gain RF Driver Amplifier

文件：1.24644 Mbytes 頁(yè)數(shù)：28 Pages

INFINEON

英飛凌

中功率放大器

The BFP780 is a single stage driver amplifier with high linearity and high power gain. Its output 1dB compression point is 23 dBm. The chip is housed in a halogen-free industry standard package SOT343. The proper die attach with good thermal contact is 100% tested and verified. Same as BFQ790, t ·High 3rd order intercept point OIP3 of 34 dBm @ 5 V, 90 mA\n ·High compression point OP1dB of 23 dBm @ 5 V, 90 mA corresponding to 45 % collector efficiency\n ·Low minimum noise figure of 1.2 dB @ 900 MHz, 5 V, 30 mA\n ·Single stage, intended for external matching\n ·High maximum RF input p;

Infineon

英飛凌

200 mW High Gain RF Driver Amplifier

文件：1.24644 Mbytes 頁(yè)數(shù)：28 Pages

INFINEON

英飛凌

SUB-MINIATURE SILICON HIGH VOLTAGE RECTIFIER

SUB-MINIATURE SILICON HIGH VOLTAGE RECTIFIER

文件：51.63 Kbytes 頁(yè)數(shù)：1 Pages

EDAL

SUB-MINIATURE SILICON HIGH VOLTAGE RECTIFIER

文件：51.25 Kbytes 頁(yè)數(shù)：1 Pages

EDAL

BTS780

Description The BTS 780is a TrilithICcontains one double high-side switch and two low-side switches in one P-TO263-15-1. “Silicon instead of heatsink” becomes true The ultra low RDS ON of this device avoids powerdissipation. It saves costs in mechanical construction and mounting and incre

文件：164.87 Kbytes 頁(yè)數(shù)：17 Pages

SIEMENS

西門(mén)子