NPN Silicon RF Transistor

Product description The BFP460 is a low noise device based on a grounded emitter (SIEGET?) that is part of Infineon’s established fourth generation RF bipolar transistor family. Its transition frequency fT of 22 GHz, low current and high robustness characteristics make the device suitable for amp

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NPN Silicon RF Transistor

NPN Silicon RF Transistor ? General purpose low noise amplifier for low voltage, low current applications ? High ESD robustness, typical 1500V (HBM) ? Low minimum noise figure 1.1 dB at 1.8 GHz ? High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz ? Easy to use standard

文件：623.24 Kbytes 頁數(shù)：11 Pages

INFINEON

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NPN Silicon RF Transistor

文件：623.24 Kbytes 頁數(shù)：11 Pages

INFINEON

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低噪聲RF 管基

NPN硅射頻晶體管 ? 適用于低電壓、低電流應用的通用低噪聲放大器\n? 1.8 GHz 時最小噪聲系數(shù)低至 1.1 dB\n? 易于使用的標準封裝，帶有可見引線\n? 無鉛（符合 RoHS 標準）封裝;

Infineon

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NPN Silicon RF Transistor

NPN Silicon RF Transistor ? General purpose low noise amplifier for low voltage, low current applications ? High ESD robustness, typical 1500V (HBM) ? Low minimum noise figure 1.1 dB at 1.8 GHz ? High linearity: output compression point OP1dB = 13 dBm @ 3V, 35mA, 1.8GHz ? Easy to use standard

文件：623.24 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

NPN Silicon RF Transistor

文件：623.24 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

Low Noise Silicon Bipolar RF Transistor

文件：656.18 Kbytes 頁數(shù)：10 Pages

INFINEON

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包裝：盒 類別：開發(fā)板，套件，編程器 射頻評估和開發(fā)套件，開發(fā)板 描述：BOARD APPLICATION W/BFP460 LNA

INFINEON

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