絲?。?a target="_blank" title="Marking" href="/-mm/marking.html">-MM；Package：SOT-143B；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

文件：132.2 Kbytes 頁數(shù)：16 Pages

PHI

PHI

絲印：tMM；Package：SOT-143B；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：159.22 Kbytes 頁數(shù)：16 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/tmm/marking.html">tMM；Package：SOT-143B；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：148.94 Kbytes 頁數(shù)：16 Pages

PHI

PHI

絲?。?a target="_blank" title="Marking" href="/-mm/marking.html">-MM；Package：SOT-143B；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

文件：312.12 Kbytes 頁數(shù)：14 Pages

恩XP

絲印：tMM；Package：SOT-143B；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range,

文件：306.4 Kbytes 頁數(shù)：13 Pages

恩XP

絲印：tMM；Package：SOT-143B；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

絲?。?a target="_blank" title="Marking" href="/tmr/marking.html">tMR；Package：SOT-143R；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

絲?。?a target="_blank" title="Marking" href="/-mr/marking.html">-MR；Package：SOT-143R；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

文件：312.12 Kbytes 頁數(shù)：14 Pages

恩XP

絲?。?a target="_blank" title="Marking" href="/tmr/marking.html">tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range,

文件：306.4 Kbytes 頁數(shù)：13 Pages

恩XP

絲?。?a target="_blank" title="Marking" href="/tmr/marking.html">tMR；Package：SOT-143R；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：148.94 Kbytes 頁數(shù)：16 Pages

PHI

PHI