RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

NPN 14 GHz wideband transistor

General description NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. Features ■ High power gain ■ Low noise figure ■ High transition frequency ■ Gold metallization ensures excellent reliability Applications ■ Intended for Radio Frequency (RF) front e

文件：85.33 Kbytes 頁數(shù)：12 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

NPN 14 GHz wideband transistor

文件：86.45 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

NPN 14 GHz wideband transistor

文件：86.45 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

NPN 14 GHz wideband transistor

文件：93.48 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

NPN 14 GHz wideband transistor

文件：93.48 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

NPN 14 GHz寬頻帶晶體管

NPN硅平面外延晶體管，采用4針雙射極SOT343R塑料封裝。 金屬化鍍金確保極佳的可靠性\n高功率增益\n高傳送頻率\n低噪聲;

恩XP

NPN 14 GHz wideband transistor

恩XP

NPN 14 GHz wideband transistor

恩XP