絲?。?a target="_blank" title="Marking" href="/n6/marking.html">N6；Package：SOT-343N；RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

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絲?。?a target="_blank" title="Marking" href="/v1/marking.html">V1；Package：SOT-343N；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES ? Low current consumption (100 μA to 1 mA) ? Low noise figure ? Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers,

文件：143.08 Kbytes 頁數(shù)：16 Pages

PHI

PHI

絲印：V1；Package：SOT-343N；NPN 5 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES ? Low current consumption (100 μA to 1 mA) ? Low noise figure ? Gold metallization ensures excellent reliability. APPLICATIONS Wideband applications in UHF low power amplifiers,

文件：143.08 Kbytes 頁數(shù)：16 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

NPN 5 GHz wideband transistor

DESCRIPTION NPN silicon wideband transistor in a four-lead dual emitter SOT143B plastic package (cross emitter). FEATURES ? Low current consumption (100 μA to 1 mA) ? Low noise figure ? Gold metallization ensures excellent reliability. APPLICATIONS ? RF low power amplifiers, such as pocket

文件：100.99 Kbytes 頁數(shù)：12 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

NPN 5 GHz wideband transistor

文件：105.18 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

NPN 5 GHz wideband transistor

文件：105.18 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

NPN 5 GHz寬頻帶晶體管

NPN硅寬帶晶體管，采用四引腳雙射極SOT143B塑料封裝（交叉射極）。 金屬化鍍金確保極佳的可靠性\n低電流消耗（100μA至1 mA）\n低噪聲;

恩XP

NPN 5 GHz wideband transistor

恩XP