NPN wideband cascode transistor

DESCRIPTION Cascode amplifier with two discrete dies in a surface mount, 5-pin SOT353 (S-mini) package. The amplifier is primarily intended for low power RF communications equipment, such as pagers and has a very low feedback capacitance resulting in high isolation. FEATURES ? Small size ? Hig

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NPN wideband cascode transistor

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NPN wideband differential transistor

DESCRIPTION Emitter coupled dual NPN silicon RF transistor in a surface mount, 5-pin SOT353 (S-mini) package. The transistor is primarily intended for applications in the RF front end as a balanced mixer, a differential amplifier in analog and digital cellular phones, and in cordless phones, page

文件：59.19 Kbytes 頁數(shù)：8 Pages

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PHI

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：159.22 Kbytes 頁數(shù)：16 Pages

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PHI