N-channel dual-gate MOS-FET

DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. FEATURES ? Specially de

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PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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N-channel dual gate MOS-FETs

文件：326.59 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

N-channel dual gate MOS-FETs

文件：326.59 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

N-channel dual-gate MOS-FET

文件：138.81 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

N-channel dual-gate MOS-FET

文件：138.81 Kbytes 頁數(shù)：12 Pages

JMNIC

錦美電子

N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type Field-Effect Transistor in a plastic SOT143R package. \n\n?High transfer admittance to input capacitance ratio\n\n?Low noise;

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N-channel dual-gate MOS-FET

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