Dual-gate MOS-FETs

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES ? High forward transfer admittance ? Short ch

文件：87.6 Kbytes 頁數(shù)：8 Pages

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PHI

Dual-gate MOS-FETs

DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. FEATURES ? High forward transfer admittance ? Short ch

文件：258.18 Kbytes 頁數(shù)：9 Pages

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RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nDepletion type Field-Effect Transistor in a plastic SOT143R package. \n\n?High forward transfer admittance\n\n?High forward transfer admittance to input capacitance ratio\n\n?Integrated back-to-back diodes between gates and source;

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