Silicon N-Channel MOSFET Triode

● For high-frequency stages up to 300 MHz preferably in FM applications ● IDSS = 4mA, gfs = 12mS

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INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/ld/marking.html">LD；Package：SOT-23；N-Channel MOS-Fieldeffect Triode, Depletion Mode

Features ? Integrated gate protection diode ? Low feedback capacitance ? Low noise figure ? Lead (Pb)-free component ? Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications High frequency stages up to 300 MHz. ?

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VISHAYVishay Siliconix

威世威世科技公司

Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)

● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS

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SIEMENS

西門子

UHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices a

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PHI

PHI

5mm Cylindrical LED lamp, FLAT TOP

文件：240.75 Kbytes 頁數(shù)：4 Pages

BETLUX

Cylindrical Type LED lamp

文件：92.5 Kbytes 頁數(shù)：3 Pages

BETLUX