RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

Dual N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nThe BF1218 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads and an integrated switch. The integrated switch is operated by the gate1 bias of amplifier B. The sou \n\n?High forward transfer admittance\n\n?High forward transfer admittance to input capacitance ratio\n\n?Internal switch to save external components\n\n?Superior cross modulation performance during AGC\n\n?Two low noise gain controlled amplifiers in a single package;

恩XP

Elect Cu Single Insul Wire Ferrules, Smooth Funnel Entry, 12 AWG, 1.02 L, Tin Plated, Gray, For use on Cu Cond.

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HUBBELL

Elect Cu Single Insul Wire Ferrules, Smooth Funnel Entry, 12 AWG, 1.02 L, Tin Plated, Orange, For use on Cu Cond.

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HUBBELL

Elect Cu Single Insul Wire Ferrules, Smooth Funnel Entry, 12 AWG, 1.02 L, Tin Plated, Gray.

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HUBBELL