RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

絲?。?a target="_blank" title="Marking" href="/va/marking.html">VA；N-channel dual gate MOSFET

Product profile 1.1 General description Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1217WR is encapsulated in the SOT343R plastic package. 1.2 Fe

文件：185.07 Kbytes 頁數(shù)：17 Pages

恩XP

N-channel dual-gate MOSFET

OverviewEnhancement type N-channel dual gate Field-Effect Transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1217WR is encapsulated in a plastic SOT343R package. \n\n?Excellent low frequency noise performance\n\n?High forward transfer admittance\n\n?High forward transfer admittance to input capacitance ratio\n\n?Superior cross modulation performance during AGC;

恩XP

M12 CONNECTOR

FEATURES ? M12 female connector ? A code ? panel mount ? IP67

文件：328.81 Kbytes 頁數(shù)：3 Pages

CUID

4-Pin SIP OptoMOS? Relay

文件：109.76 Kbytes 頁數(shù)：5 Pages

CLARE

Clare, Inc.

Voltage-Controlled, Single-Pole, Normally Open, 4-Pin SIP OptoMOS Relay

文件：114.39 Kbytes 頁數(shù)：6 Pages

IXYS

艾賽斯