N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：113.99 Kbytes 頁(yè)數(shù)：16 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

N-channel dual-gate PoLo MOS-FETs

恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：113.99 Kbytes 頁(yè)數(shù)：16 Pages

PHI

PHI

N-channel dual-gate PoLo MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1201, BF1201R and BF1201WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

文件：113.99 Kbytes 頁(yè)數(shù)：16 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

N-channel dual-gate PoLo MOS-FETs

文件：127.23 Kbytes 頁(yè)數(shù)：16 Pages

JMNIC

錦美電子

N-channel dual-gate PoLo MOS-FETs

文件：127.23 Kbytes 頁(yè)數(shù)：16 Pages

JMNIC

錦美電子

N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type Field-Effect Transistor in a plastic SOT143R package. \n\n?High transfer admittance to input capacitance ratio\n\n?Integrated diodes between gates and source\n\n?Low noise\n\n?Source and substrate interconnected;

恩XP