RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

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恩XP

Silicon RF switches

Overview Archived content is no longer updated and is made available for historical reference only.\nThese switches are a combination of a depletion type Field-Effect Transistor (FET) and a band-switching diode. The BF1118, BF1118R, BF1118W and BF1118WR are encapsulated in the SOT143B, SOT143R, SOT3 \n\n?Specially designed for low loss RF switching up to 1 GHz;

恩XP

Dual 1A Low Dropout Regulator

文件：813.81 Kbytes 頁數(shù)：8 Pages

BELLING

上海貝嶺

Sound, Alarm & Security Cable

文件：73.18 Kbytes 頁數(shù)：1 Pages

GENERAL

通用電纜

CK ROTARY SWITCH

FEATURES Standard 30° indexing, 60° and 90° available Moulded 27.5mm diameter Single wafer switch Maximum 12 positions Up to 4 poles per switch Shorting (make before break 30° indexing only) or non-shorting (break before make) Moulded stop or adjustable stops to restrict number of posit

文件：922.87 Kbytes 頁數(shù)：4 Pages

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