N-channel single gate MOSFET

General description The BF1107 is a depletion type field-effect transistor in a SOT23 package. The low loss and high isolation capabilities of this MOSFET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain protect against excessive input

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恩XP

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁(yè)數(shù)：130 Pages

恩XP

N-channel single gate MOS-FETs

DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain p

文件：54.54 Kbytes 頁(yè)數(shù)：8 Pages

PHI

PHI

N-Channel 60-V (D-S) MOSFET

FEATURES ? Halogen-free According to IEC 61249-2-21 Definition ? Low Threshold: 2 V (typ.) ? Low Input Capacitance: 25 pF ? Fast Switching Speed: 25 ns ? Low Input and Output Leakage ? TrenchFET? Power MOSFET ? 1200V ESD Protection ? Compliant to RoHS Directive 2002/95/EC BENEFITS ? Low

文件：981.34 Kbytes 頁(yè)數(shù)：8 Pages

VBSEMI

微碧半導(dǎo)體

MOSFET N-channel switching transistor

Overview Archived content is no longer updated and is made available for historical reference only.\nDepletion type N-channel Field-Effect Transistor in a SOT23 package. \n\n?Drain and source are interchangeable\n\n?Integrated diodes between gate and source and between gate and drain;

恩XP

N-channel single gate MOS-FETs

DESCRIPTION The BF1107 and BF1107W are depletion type field-effect transistors in SOT23 and SOT323 packages respectively. The low loss and high isolation capabilities of this MOS-FET provide excellent RF switching functions. Integrated diodes between gate and source and between gate and drain p

文件：54.54 Kbytes 頁(yè)數(shù)：8 Pages

PHI

PHI

N-channel single gate MOS-FETs

文件：66.4 Kbytes 頁(yè)數(shù)：8 Pages

JMNIC

錦美電子

N-channel single gate MOS-FETs

文件：66.4 Kbytes 頁(yè)數(shù)：8 Pages

JMNIC

錦美電子