N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packa

文件：152.37 Kbytes 頁數(shù)：16 Pages

PHI

PHI

RF Manual 16th edition

General description 10W plastic LDMOS power transistor for base station applications at frequencies from 700 MHz to 2700 MHz. Features and benefits ■ High efficiency ■ Excellent ruggedness ■ Designed for broadband operation ■ Excellent thermal stability ■ High power gain ■ Integrated ESD p

文件：9.37507 Mbytes 頁數(shù)：130 Pages

恩XP

N-channel dual-gate MOSFET

Overview Archived content is no longer updated and is made available for historical reference only.\nEnhancement type N-channel Field-Effect Transistor. \n\n?High forward transfer admittance to input capacitance ratio\n\n?Internal self-biasing circuit to ensure good cross-modulation performance\n\n?Low noise gain controlled amplifier up to 1 GHz;

恩XP

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packa

文件：152.37 Kbytes 頁數(shù)：16 Pages

PHI

PHI

ISA Half size CPU Card

文件：646.58 Kbytes 頁數(shù)：2 Pages

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